J. Phys. IV France
Volume 132, March 2006
Page(s) 255 - 258
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 255-258

DOI: 10.1051/jp4:2006132048

AES measurements of Sb mass transport in amorphous Si thin films

J. Nyéki1, 2, C. Girardeaux2, A. Rolland2 and J. Bernardini2

1  Department of Solid State Physics, University of Debrecen, PO Box 2, 4010 Debrecen, Hungary
2  L2MP, UMR 6137 - CNRS, Université Paul Cézanne, 13397 Marseille Cedex 20, France

Sb diffusion in an amorphous Si thin film and Sb segregation kinetics onto the Si film were studied by Auger electron spectroscopy in the temperature range of 600-723 K. Segregation factors and antimony diffusivities were estimated from the experimental kinetics curves, on the basis of the Lea and Seah model, the Sb bulk concentration in Si films being studied by TEM. Sb diffusivities in amorphous Si proved to be 10-12 orders of magnitude higher than that of measured in crystalline Si, the pre-exponential factors being of the same order of magnitude.

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