J. Phys. IV France
Volume 132, March 2006
Page(s) 225 - 229
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 225-229

DOI: 10.1051/jp4:2006132043

Interface formation and structural properties of iron films on Al0.48 In0.52As(001)

P. Schieffer, N. Tournerie, B. Lépine, C. Lallaizon, A. Guivarc'h and G. Jézéquel

Université de Rennes 1, Équipe de Physique des Surfaces et Interfaces, UMR CNRS-Université 6627 PALMS, Bât. 11C, Campus de Beaulieu, 35042 Rennes, France

Using reflection high-energy electron diffraction as well as ultraviolet and X-ray photoemission spectroscopy we have investigated the growth of epitaxial Fe ultrathin films onto Al0.48In0.52(001)-($2\times 4$) surface. The Fe films grow in a body centered cubic (bcc) structure with epitaxial relationship Fe(001)<100>//Al0.48In0.52As(001)<100>. The analysis of the photoemission data demonstrates that Fe atoms react with the Al0.48In0.52As substrate. In and As atoms, liberated during the first stage of the growth, tend to segregate at the films surface while reacting Al atoms are accommodated in an interfacial alloy. The Fermi level pinning position at the Fe/Al0.48In0.52As(001) interface, determined from the photoemission results, is found 0.76 +/- 0.08 eV below the conduction band minimum.

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