J. Phys. IV France
Volume 132, March 2006
Page(s) 159 - 162
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 159-162

DOI: 10.1051/jp4:2006132031

Orientation and interface effects on the structural and magnetic properties of MnAs-on-GaAs hybrid structures

L. Däweritz1, D. Kolovos-Vellianitis1, A. Trampert1, C. Herrmann1, K.H. Ploog1, E. Bauer2, 3, A. Locatelli3, S. Cherifi4 and S. Heun5

1  Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany
2  Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287, USA
3  Sincrotrone Trieste, 34012 Basovizza, Trieste, Italy
4  Laboratoire Louis Néel, CNRS, 38042 Grenoble Cedex 9, France
5  TASC-INFM Laboratory, Basovizza, 34012 Trieste, Italy

MnAs grows either with the $(1\bar {1}00)$prism-plane on GaAs(001), (113)A and (110) or the (0001) c-plane on GaAs(111)B substrates. The strain state of the films determines the phase coexistence of ferromagnetic $\alpha $- and paramagnetic $\beta $-MnAs and their distribution in self-organized structures. The mismatch accommodation mechanisms along the a-axis of $\alpha $-MnAs are in principle the same for all substrate orientations, while they are very different along the c-axis. Depending on the orientation the Curie temperature can exceed the value for bulk MnAs.

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