J. Phys. IV France
Volume 132, March 2006
Page(s) 87 - 90
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 87-90

DOI: 10.1051/jp4:2006132017

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy

M. El Kazzi1, G. Delhaye1, S. Gaillard1, 2, E. Bergignat1 and G. Hollinger1

1  LEOM (UMR 5512), École Centrale de Lyon, 69134 Ecully Cedex, France
2  ST Microelectronics, 38926 Crolles Cedex, France

We used X-ray Photoemission Spectroscopy (XPS) to study the structural and chemical properties of SrO grown by Molecular Beam Epitaxy (MBE) on Si(001) substrates in the following conditions: (i) low temperature growth at 30°C and (ii) high temperature growth at 500°C. The crystalline quality of the film deposit was controlled in-situ by Reflection High-Energy Electron Diffraction (RHEED). The results show the growth, at low temperature of epitaxial SrO; and at high temperature the formation of crystalline silicate.

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