J. Phys. IV France
Volume 132, March 2006
Page(s) 63 - 67
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 63-67

DOI: 10.1051/jp4:2006132012

Electronic properties of metal/MgO(001) interfaces

Y. Lu, C.K. Assi, J.C. Le Breton, P. Turban, B. Lépine, P. Schieffer and G. Jézéquel

Université de Rennes 1, Équipe de Physique des Surfaces et Interfaces, UMR CNRS-Université No. 6627 PALMS, Bât. 11C, Campus de Beaulieu, 35042 Rennes Cedex, France

The Schottky barrier heights (SBH) at various metal-MgO interfaces (Mg, Al, Ni, Fe, Pd, and Ag) were studied by ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS). In order to determine the Schottky barrier height, the energy distance between the O2s core level of MgO and the MgO valence band maximum (VBM) is determined to be $18.0\pm 0.1$ eV at first. The Schottky barrier heights variation with metal Pauling electronegativities is linear fitted with a slope parameter of $1.86 \pm 0.15$.

© EDP Sciences 2006