| Numéro |
J. Phys. IV France
Volume 125, June 2005
|
|
|---|---|---|
| Page(s) | 639 - 641 | |
| DOI | https://doi.org/10.1051/jp4:2005125146 | |
J. Phys. IV France 125 (2005) 639-641
DOI: 10.1051/jp4:2005125146
Photo-Carrier-Radiometry (PCR) metrology for semiconductor manufacturing inspection
X. Guo1, J.A. Garcia1, A. Mandelis1, 2 and A. Simmons11 Photo-Thermal Diagnostics Inc., 243 College St., Toronto, Ontario M5T 1R5, Canada
2 Centre for Advanced Diffusion-Wave Technologies (CADIFT), Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, Ontario, M5S 3G8, Canada
Abstract
Non-contact, non-intrusive photo-carrier radiometry (PCR) was used for monitoring the ion implantation of (p-type) industrial-grade silicon wafers. The silicon wafers were implanted with boron in the dose range of
to
ions/cm2 at various implantation energies (10 keV to 180 keV). The results indicated excellent sensitivity to the implantation doses and energies. This laser-based photo-carrier diffusion-wave technique monitors harmonically photo-excited and recombining carriers and shows substantial potential advantages over existing methodologies for characterization of multiple semiconductor processes such as ion implantation and other device fabrication steps in the Si wafer processing industry.
© EDP Sciences 2005