J. Phys. IV France
Volume 123, March 2005
Page(s) 53 - 57

J. Phys. IV France 123 (2005) 53-57

DOI: 10.1051/jp4:2005123008

CuIn1-xGaxSe2 thin films prepared by one step electrodeposition

K. Bouabid1, A. Ihlal1, A. Manar1, A. Outzourhit2 and E.L. Ameziane2

1  Équipe de Physique des Semi-Conducteurs, Département de Physique, Faculté des Sciences, BP. 8106, Université Ibn Zohr, Agadir, Maroc
2  Laboratoire de Physique des Solides et des Couches Minces, Département de Physique, Faculté des Sciences Semlalia, BP. S/3293, Marrakech, Maroc

CuIn $_{1-{\rm x}}$Ga$_{\rm x}$Se2 thin films were deposited onto Mo and SnO2 coated glass substrates at potentials in the interval -350 to -600 mV by one step electro-deposition from reagents CuSO4, In2(SO4)3, SeO2 and Ga2(SO4)3. The influence of Ga2(SO4)3 concentration on the compositions of the films was studied. The crystalline structure, composition, morphology, opto-electronic properties of the as-deposited and annealed films was investigated. The films annealed under vacuum at 400 $^{\circ}$C are polycristallins and show preferred orientation (112) as confirmed by X-ray diffraction analysis. Optical absorption studies of these films indicated that the band gap value for x = 0.32 is of about 1.25 eV.

© EDP Sciences 2005