Numéro
J. Phys. IV France
Volume 12, Numéro 9, November 2002
Page(s) 99 - 100
DOI http://dx.doi.org/10.1051/jp4:20020370


J. Phys. IV France
12 (2002) Pr9-99
DOI: 10.1051/jp4:20020370

Polarons at the field-effect junctions

N. Kirova and M.-H. Bussac


Abstract
We consider the interface of a molecular crystal with a polar dielectrics. Coulomb interaction of free electrons in the crystal with surface polar phonons of the dielectrics can lead to self-trapping of carriers. For typical parameters of field effect transistors the binding energy is found to be high enough t o allow for formation of a strongly coupled polaron. The effect is further enhanced at presence of the bias electric filed.



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