J. Phys. IV France 12 (2002) Pr9-99
DOI: 10.1051/jp4:20020370
Polarons at the field-effect junctions
N. Kirova and M.-H. Bussac Abstract
We consider the interface of a molecular crystal with a polar dielectrics. Coulomb
interaction of free electrons in the crystal with surface polar phonons of the dielectrics can lead to
self-trapping of carriers. For typical parameters of field effect transistors the binding energy is found
to be high enough t o allow for formation of a strongly coupled polaron. The effect is further enhanced
at presence of the bias electric filed.
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