Numéro
J. Phys. IV France
Volume 12, Numéro 9, November 2002
Page(s) 103 - 108
DOI http://dx.doi.org/10.1051/jp4:20020371


J. Phys. IV France
12 (2002) Pr9-103
DOI: 10.1051/jp4:20020371

Focused-ion-beam fabricated charge density wave devices

E. Slot and H.S.J. van der Zant

Department of Applied Sciences and DIMES, Delft University of Technology, Lorentzweg I,2628 CJ Delft, The Netherlands


Abstract
We have fabricated a variety of Charge-Density-Wave (CDW) devices using a focused-ion-beam (FIB) process. The FIB is used to etch any desired geometry in crystals, like constrictions, tears, trenches, zigzag patterns etcetera. We have studied the electrical transport of these devices. This study includes: finite size effects (e.g. dependence of the threshold for CDW sliding on the width while maintaining the same thickness of samples), conduction perpendicular to the chains, geometrical effects and CDW junctions. We have found complete mode-locking on CDW constrictions, indicating that the high-quality crystal properties are preserved after FIB processing. This makes the process a useful technique to study submicron CDW dynamics.



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