J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 93 - 96

J. Phys. IV France
12 (2002) Pr3-93
DOI: 10.1051/jp420020043

Mesoscopic transport characteristics of nano-scale SOI MOSFETs: Coulomb blockade and localization

Y. Omura1 and M. Yamamoto2

1  High-Technology Research Center, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
2  Division Electronics and Information Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan

This paper describes the transport characteristics, measured at 1.1 K, of 50-nm-channel SOI MOSFETs with a 6-nm-thick silicon layer. To verify electron localization, Fermi wavelength, periodic length of primary interface morphology, and ideal cyclotron radius are estimated theoretically. It is shown that nonperiodic roughness may contribute to Anderson localization while the local periodic structure of the interface morphology is associated with Coulomb blockade.

© EDP Sciences 2002