J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 85 - 92

J. Phys. IV France
12 (2002) Pr3-85
DOI: 10.1051/jp420020042

Si nano-devices using an electron-hole system

A. Fujiwara and Y. Takahashi

NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

Si nano-devices consisting of a Si quantum wire with fine gates are described. Storage and detection of single charges are enabled based on the electron-hole (e-h) system in the Si wire. Due to the electric field applied across the Si wire, electrons and holes are spatially separated within the Si wire so that they do not recombine soon. Stored charges in the Si wire can be sensed by the current of the other type of charges flowing nearby. Based on this technique, the charge-coupled device that can manipulate a single charge is realized.

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