J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 67 - 70

J. Phys. IV France
12 (2002) Pr3-67
DOI: 10.1051/jp420020038

Ge semiconductor devices for cryogenic power electronics - II

R.R. Ward1, W.J. Dawson1, R.K. Kirschman1, O. Mueller2, R.L. Patterson3, J.E. Dickman3 and A. Hammoud4

1  GPD Optoelectronics Corp., 7 Manor Parkway, Salem, New Hampshire 03079, U.S.A.
2  LTE, Low Temperature Electronics, Ballston Lake, New York 12019, U.S.A.
3  NASA Glenn Research Center, Cleveland, Ohio 44135, U.S.A.
4  QSS Group Inc., Cleveland, Ohio, U.S.A.

We have begun investigation and development of cryogenic semiconductor power devices (diodes, bipolar transistors and field-effect transistors) based on germanium. The motivation is NASA's interest in electronics that can operate down to deep cryogenic temperatures (as low as ${\approx}30{-}40$ K) for exploration of the outer planets and other Solar System bodies that present cold environments as well as for future space observatories. There are also potential applications related to cryogenic/superconducting motors and generators and power distribution and storage. We have characterized available Ge diodes and bipolar transistors at cryogenic temperatures and have begun examining MIS (metal-insulator-semiconductor) capacitors on Ge. Our investigations show that all these types of devices can operate from room temperature down to 20 K or lower.

© EDP Sciences 2002