J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 37 - 44

J. Phys. IV France
12 (2002) Pr3-37
DOI: 10.1051/jp420020033

Low frequency noise versus temperature spectroscopy of Ge JFETs, Si JFETs and Si MOSFETs

D.V. Camin, C.F. Colombo and V. Grassi

Dipartimento di Fisica dell'Università and Istituto Nazionale di Fisica Nucleare, 20113 Milano, Italy

We have measured low frequency noise in Ge JFETs, Si JFETs and Si MOSFETs. By analyzing the data taken at different temperatures we have been able to determine the energy level and cross sections of traps that give origin to the Lorentzian noise components. To do that we have designed a HW/SW system capable to perform measurements between 4K-300K and to calculate the trap's parameters. Shallow levels have been identified in Ge JFETs. Lorentzian components have been identified in MOS noise spectra.

© EDP Sciences 2002