J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 23 - 26

J. Phys. IV France
12 (2002) Pr3-23
DOI: 10.1051/jp420020030

Low temperature operation of graded-channel SOI nMOSFETs for analog applications

M.A. Pavanello1, 2, P.G. Der Agopian11, J.A. Martino1 and D. Flandre3

1  Laboratorio de Sistemas Integraveis, University of Sao Paulo, Av. Prof. Luciano Gualberto, Trav. 3 N. 158, 05508-900 Sao Paulo, Brazil
2  Center for Semiconductor Components, State University of Campinas, Campinas, Brazil
3  Laboratoire de Microélectronique, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

We present in this work is an analysis of the low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fullydepleted SOI nMOSFET.

© EDP Sciences 2002