J. Phys. IV France 12 (2002) Pr3-23
Low temperature operation of graded-channel SOI nMOSFETs for analog applicationsM.A. Pavanello1, 2, P.G. Der Agopian11, J.A. Martino1 and D. Flandre3
1 Laboratorio de Sistemas Integraveis, University of Sao Paulo, Av. Prof. Luciano Gualberto, Trav. 3 N. 158, 05508-900 Sao Paulo, Brazil
2 Center for Semiconductor Components, State University of Campinas, Campinas, Brazil
3 Laboratoire de Microélectronique, Université Catholique de Louvain, Louvain-la-Neuve, Belgium
We present in this work is an analysis of the low temperature operation of Graded-Channel fully-depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications. This analysis is supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations and measurements. The Graded-Channel transistor presents higher Early voltage and transconductance at 100 K if compared to the conventional fullydepleted SOI nMOSFET.
© EDP Sciences 2002