Numéro |
J. Phys. IV France
Volume 12, Numéro 3, May 2002
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Page(s) | 15 - 18 | |
DOI | https://doi.org/10.1051/jp420020028 |
J. Phys. IV France 12 (2002) Pr3-15
DOI: 10.1051/jp420020028
Degradation of hard MOS devices at low temperature
N.T. FourchesDAPNIA/SEDI, CEA Saclay, 91191 Gif-sur-Yvette, France
Abstract
A study of n-channel MOS transistors stressed under Fowler Nordheim injection was made both at room temperature and low temperature
(77 K). Using alternatively positive and negative bias one can create interface states or bulk oxide charge at 300 K. This
is comparable to ionising irradiation. At 77 K a slight reverse annealing occurs, due to the weak neutralization of interface
states, under negative bias. Under positive bias no significant threshold voltage shift occurs at low temperature, almost
all the interface charge being compensated by the oxide charge.
© EDP Sciences 2002