J. Phys. IV France
Volume 12, Numéro 3, May 2002
Page(s) 15 - 18

J. Phys. IV France
12 (2002) Pr3-15
DOI: 10.1051/jp420020028

Degradation of hard MOS devices at low temperature

N.T. Fourches

DAPNIA/SEDI, CEA Saclay, 91191 Gif-sur-Yvette, France

A study of n-channel MOS transistors stressed under Fowler Nordheim injection was made both at room temperature and low temperature (77 K). Using alternatively positive and negative bias one can create interface states or bulk oxide charge at 300 K. This is comparable to ionising irradiation. At 77 K a slight reverse annealing occurs, due to the weak neutralization of interface states, under negative bias. Under positive bias no significant threshold voltage shift occurs at low temperature, almost all the interface charge being compensated by the oxide charge.

© EDP Sciences 2002