J. Phys. IV France 11 (2001) Pr3-683-Pr3-687
Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursorA. Wohlfart1, A. Devi1, F. Hipler1, H.W. Becker2 and R.A. Fischer1
1 Lehrstuhl für Anorganische Chemie II, Organometallics and Materials Chemistry, Universitätsstr. 150, 44780 Bochum, Germany
2 Lehrstuhl für Experimentelle Physik III, Universitätsstr, 150, 44780 Bochum, Germany
We report the growth of highly crystalline and oriented α-GaN layers showing a porous-like microstructure. Employing specific CVD conditions, GaN layers with such morphological features were obtained, and characterized in detail by XRD methods. The layer composition was analysed by XPS, AES as well as RBS, and the morphology was investigated by SEM and AFM measurements.
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