J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-683 - Pr3-687
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-683-Pr3-687

DOI: 10.1051/jp4:2001387

Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor

A. Wohlfart1, A. Devi1, F. Hipler1, H.W. Becker2 and R.A. Fischer1

1  Lehrstuhl für Anorganische Chemie II, Organometallics and Materials Chemistry, Universitätsstr. 150, 44780 Bochum, Germany
2  Lehrstuhl für Experimentelle Physik III, Universitätsstr, 150, 44780 Bochum, Germany

We report the growth of highly crystalline and oriented α-GaN layers showing a porous-like microstructure. Employing specific CVD conditions, GaN layers with such morphological features were obtained, and characterized in detail by XRD methods. The layer composition was analysed by XPS, AES as well as RBS, and the morphology was investigated by SEM and AFM measurements.

© EDP Sciences 2001