J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-377 - Pr3-383
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-377-Pr3-383

DOI: 10.1051/jp4:2001348

Tin oxide APCVD thin films grown by SnCl4 oxidation on glass and Si substrates in a cold wall reactor

A. Koutsogianni and D. Tsamakis

Department of Electrical and Computer Engineering, National Technical University of Athens, Hroon Polytexniou 9, Zografou 15773, Athens, Greece

Tin oxide films were grown by Chemical Vapor Deposition (CVD) on glass and Si substrates at atmospheric pressure (AP) and temperatures varying between 430 and 580°C in a cold wall orizontal reactor, radiatevelly heated, by oxidation of SnCl4 vapors with O2. The structure of SnO2 thin films has been studied by X-ray diffraction and their surface morphology by Scanning Electronic Microscopy. It was shown that films have a grain size that increases with temperature from 0.1 to 0.50nm as the temperature of deposition increases from 430 to 580°C. It was also shown that that they present very good uniformity at temperatures between 450 and 480°C. Electrical resistivity measurements have been perfomed in the temperature range 300-600K. The most conductive films were obtained at 480°C. Furthemore, these films exhibited the highest transmission, of the order of 80%. In this case the minimum resistivity value is about l.6.10-3Ω.cm. Tin oxide films present no hase and they also exhibit high transmission in the visible range, larger than 80%.

© EDP Sciences 2001