J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-239 - Pr3-246
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-239-Pr3-246

DOI: 10.1051/jp4:2001330

Low pressure chemical vapor deposition of CuxS

B. Meester, L. Reijnen, F. de Lange, A. Goossens and J. Schoonman

Laboratory for Inorganic Chemistry, Delft University of Technology, Julianalaan 136, 2628 Delft, The Netherlands

CuxS thin films have been prepared on glass substrates by Low-Pressure Chemical Vapor Deposition (LPCVD) in a hot wall reactor from copper(II) bis-tetramethylheptanedionate (Cu(thd)2) hydrogen sulfide (H2S), and hydrogen. The influence of the temperature, the H2S partial pressure, and the Cu(thd)2 partial pressure on the crystalline phase composition, the stoichiometry, and the morphology has been examined. It is found that the temperature determines the crystalline phase of the films. Pure CuS thin films form up to 227 °C, whereas films with mixed phases of increased copper content form when the temperature increases up to 505 °C. The reaction kinetics are investigated and discussed by analyzing the axial deposition profile of the deposited films. We propose a mechanism based on the competitive adsorption and reaction of Cu(thd)2, H2S, and 2H(thd). Downstream the reactor the surface reaction between Cu(thd)2 and H2S is retarded by co-absorption of H(thd)(g) which leads to blocking of the active surface sites.

© EDP Sciences 2001