J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-223 - Pr3-230
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-223-Pr3-230

DOI: 10.1051/jp4:2001328

Halide CVD of dielectric and ferroelectric oxides

A. Harsta

Department of Materials Chemistry, Angström Laboratory, Uppsala University, Box 538, 75121 Uppsala, Sweden

Thin films of dielectric and ferroelectric oxide films can be expected to play an increasingly important role in many future applications. Potential applications include areas such as the communication sector, radar, IR detectors, memories, integrated optics and electronics. In this context, a promising preparation method is CVD, where a very important issue is the selection of precursor materials. This choice affects, e. g., the purity of the resulting film and the lowest possible deposition temperature. During the latest years, we have been depositing both dielectric oxides such as TiO2, Ta2O5, ZrO2, HfO2 and the ferroelectric Bi4Ti3O12 phase by halide CVD using iodide precursors. In the present paper, a brief review of these results will be given as well as a comparison with other precursors such as the more comrnonly used chlorides and metalorganics.

© EDP Sciences 2001