J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-205 - Pr3-212
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-205-Pr3-212

DOI: 10.1051/jp4:2001326

A TCAD tool for the simulation of the CVD process based on cellular automata

G.Ch. Sirakoulis, I. Karafyllidis and A. Thanailakis

Demokritus University of Thrace, Department of Electrical and Computer Engineering, Laboratory of Electrical and Electronic Materials Technology, 67100 Xanthi, Greece

The development of next-generation VLSI circuits with deep submicron technologies demands fundamental understanding of the wafer surface reaction kinetics. Technology cornputer-aided design (TCAD) is essential for modeling real fabrication processes accurately, and allowing predictive simulation during technology research and development. This paper describes a two-dimensional Chemical Vapor Deposition (CVD) process TCAD system based on cellular automata (CAs). The proposed TCAD system can handle the complicated boundary and initial conditions imposed by defects and provide SEM-like cross sectional views. The simulated profiles obtained are in very good agreement with experimental and simulation results found in the literature. Furthermore, a user-friendly interface that enables easy and effective interaction between the user and the TCAD system has been developed.

© EDP Sciences 2001