J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-1197 - Pr3-1201
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-1197-Pr3-1201

DOI: 10.1051/jp4:20013151

Fabrication of fine copper lines on AZ 5214TM patterned silicon substrates by selective chemical vapor deposition

A.N. Gleizes1, S. Vidal1 and D. Davazoglou2

1  Institut National Polytechnique de Toulouse, ENSI Arts Chimiques et Technologiques de Toulouse, 118 route de Narbonne, 31077 Toulouse cedex 04, France
2  NCSR "Demokritos", Institute of Microelectronics, P.O. Box 60228, 15310 Aghia Paraskevi, Greece

Copper features with dimensions down to 0.5 µm were fabricated on silicon substrates by selective chemical vapor deposition. For the fabrication oxidized (100) silicon substrates were used, covered with a film grown by LPCVD at 0.1 Torr and 550 °C, from W(CO)6 decomposition. These substrates were subsequently covered with AZ 5214TM photosensitive polymer, which has been developed as both positive and negative tone resist. Copper was then chemically vapor deposited on the patterned substrates by 1, 5-cyclooctadiene Cu(I) hexafluoroacetylacetonate decomposition, at 1 Torr and temperatures of 110 and 140 °C. A vertical, cold-wall reactor was used, equipped with a UV lamp permitting photon-assisted deposition. Under UV illumination, copper was deposited on resist covered and uncovered parts of the substrate. In absence of illumination, the metal was selectively grown on the tungsten film only at relatively slow rates (1 and 3.5 nm/min at 110 and 140 °C respectively). Copper films had a granular form with a grain size increasing with temperature (150 and 550 nm at 110 and 140 °C respectively). Afer depositions the resist was removed in oxygen plasma leading to the formation of fine copper features.

© EDP Sciences 2001