J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-1065 - Pr3-1071
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-1065-Pr3-1071

DOI: 10.1051/jp4:20013133

Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition

S. Oda and K. Nishiguchi

Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, 2-12-1 O-Okayama, Meguro-ku, Tokyo 152-8552, Japan

Nanocrystalline silicon is a promising material for future ultralarge scale integrated circuits and display devices. Various methods have been demonstrated for the fabrication of nanocrystalline silicon with size less than 10nm. We have prepared nanocrystalline silicon ultrafine particles by very-high-frequency plasma decomposition of silane and hydrogen. Nanoparticles formed in the plasma cell are extracted through a small orifice and deposited onto substrates. The size of the particle is determined by the pulse sequence of gases supplied to the plasma cell, and an average diameter of 8nm with a size distribution of 1nm can be obtained. Coulomb blockade, a characteristic single-electron tunneling property, has been investigated in an array of nanoparticles and an individual particle deposited onto nanoscale electrodes.

© EDP Sciences 2001