J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-1053 - Pr3-1063
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-1053-Pr3-1063

DOI: 10.1051/jp4:20013132

CVD techniques for gas separation membranes synthesis - characterization - applications

J. Durand and V. Rouessac

Institut Européen des Membranes, UMR 5635 du CNRS, Université Montpellier II, CC 047, place E, Bataillon, 34095 Montpellier cedex 5, France

Membranes used in the separation of gas phase have found a number of important applications. In the past few years, the development of inorganic membranes, which have numerous advantages (thermal and mechanical stabilities, steam cleaning ability...) paved the way for high temperature applications. Inorganic membranes are widely used in gas separation processes such as reversible dehydrogenation reaction, O2/N2separation, CO2 and volatil organic compounds recovery...Usually, inorganic membranes (SiO2, Al2O3, TiO2, ZrO2, Pd...) are deposited on porous substrates in the sol-gel way. CVD techniques can be used as an alternative process for the deposition of very thin films in a wide range of temperature. The membranes deposited belong to the oxide, nitride, carbide and mixted metal compounds. We will present the different CVD techniques used in membranes synthesis : conventional CVD and OMCVD, counterdiffusion CVD, plasma assisted CVD. From a porous substrate, the CVD techniques lead to the pore diameter reduction or film deposition on the top of the membrane and plugs penetrating the pore entrance. Some examples of gas separation membranes coated by CVD will be developed.

© EDP Sciences 2001