J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-1037 - Pr3-1044
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-1037-Pr3-1044

DOI: 10.1051/jp4:20013130

Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS

D.N. Kouvatsos1, V.Em. Vamvakas1 and D. Davazoglou1

1  Institute of Microelectronics, NCSR "Demokritos", P.O. Box 60228, 15310 Aghia Paraskevi, Greece

In this work we investigated the structural and electrical characteristics of SiO2 films deposited by Low Pressure Chemical Vapor Deposition (LPCVD) using tetraethylorthosilicate (TEOS) under various deposition pressures and temperatures and their application as gate dielectrics in thin film transistors. It was found using Fourier Transform InfraRed spectroscopy (FTIR) that films deposited at temperatures lower than 635 °C are carbon contaminated, so this temperature was considered as the lowest limit for depositing SiO2 films with an acceptable carbon contamination. The threshold voltage of TFTs utilizing these oxides was correlated with the structural properties of the oxides. The degradation of the TFT transfer characteristics under various stressing gate bias values was studied and the evolution of the electrical parameters with stressing time was determined. The degradation of both the threshold voltage and the subthreshold swing exhibits a logarithmic dependence with stressing time, indicating a charge trapping process occurring in the oxide and at the polysilicon / SiO2 interface.

© EDP Sciences 2001