J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-825 - Pr3-832
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-825-Pr3-832

DOI: 10.1051/jp4:20013104

Selective area deposition of titanium dioxide thin films by light induced chemical vapour deposition

E. Halary-Wagner, P. Lambelet, G. Benvenuti and P. Hoffmann

Institute of Applied Optics, Micro-Engineering Department, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland

Titanium dioxide thin films are deposited from titanium tetraisopropoxide in an oxygen atmosphere using a 308 nm long pulse XeCl excimer laser. A mask containing several slits and lines of different widths (30-130 µm), is imaged onto the substrate by a single lens, with a reducing imaging factor of 0.4. The localization of the deposition in the irradiated area and the resolution of the obtained patterns are studied by optical microscopy and stylus profilometry. Effects of substrate temperature (60-200°C), fluence (100-200 mJ/cm2) and number of pulses (2000-6000) are investigated. Pattern deposit resolution is limited by the optical set up as shown by correspondance between optical simulation and deposit profile, and is drastically reduced by defocalisation. Increasing the deposit thickness also reduces the pattern resolution.

© EDP Sciences 2001