J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-803 - Pr3-810
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-803-Pr3-810

DOI: 10.1051/jp4:20013101

Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition method

P. Thévenin, A. Soltani and A. Bath

Université de Metz, MOPS-CLOES Supélec, 2 rue E. Belin, 57078 Metz, France

Thin films of boron nitride (BN) have been deposited at low temperature by microwave plasma enhanced chemical vapour deposition (PECVD), using borane dimethylamine as boron precursor. Chemically stable and smooth films of hexagonal boron nitride (h-BN) have been synthesised. Infrared transmittance spectroscopy is used for the phase identification, and also for the determination of the orientation of the c-axis in the samples. The influence of the deposition conditions on the film's morphology have been studied, by varying independently the plasma power, the pressure and the precursor flux.

© EDP Sciences 2001