J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-97 - Pr10-100
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-97-Pr10-100

DOI: 10.1051/jp4:19991025

Phase slip and the motion of charge-density wave dislocations in NbSe3

J.C. Gill

H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.

The common view that a moving CDW behaves elastically except near current terminals, where phase slip occurs at a rate determined by the nucleation of dislocation loops, is shown to be in important respects inconsistent with experiment. An alternative model is developed, which allows the rate of phase slip to be limited by the climb velocity of dislocations created in the course of depinning. The model appears to account for the phase slip and strain distribution in NbSe3 specimens of various lengths, and for other phenomena not readily explicable in conventional terms.

© EDP Sciences 1999