J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-901 - Pr8-908
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-901-Pr8-908

DOI: 10.1051/jp4:19998113

New flash-evaporation feeder for chemical vapor deposition

I.S. Chuprakov, J.D. Martin and K.H. Dahmen

Chemistry Department and MARTECH, Florida State University, Tallahassee, FL 32310, U.S.A.

A new device for generation of vapor of solid precursor(s) for the Chemical Vapor Deposition (CVD) process has been designed and tested. Powder of the precursor(s) is kept at room temperature in an inert atmosphere during the deposition and steadily delivered by small portions into an evaporator. Small beads of an inert material are added to the powder in order to dilute the mixture and make the slow powder delivery process more reliable. Flash-evaporation of the precursor(s) from the beads' surface assures controlled and constant in-time composition of the precursor(s) vapor. This facilitates the use of temperature unstable precursors. Simultaneous evaporation of several precursors allows multicomponent films to be easily grown. This process is especially suitable for use of precursors with a big difference in sublimation/evaporation temperatures. The feeder was tested during the CVD of nickel, copper, cobalt, and copper-cobalt thin films. These films were deposited from nickel(II) bisdiethylglyoximate, copper(II) bisdipivaloylmethanate, cobalt(II) bisacetylacetoniminate, and cobalt(II) bis-3,5-dimethylpyrazolylborate complexes. The conditions were optimized for the film growing processes in each case. All films were characterized by X-ray Photoelectron Spectroscopy, X-ray Diffraction and Scanning Electron Microscopy.

© EDP Sciences 1999