J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-85 - Pr8-91
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-85-Pr8-91

DOI: 10.1051/jp4:1999811

Deposition kinetics of Al2O3 from AlCl3-CO2-H2-HCl gas mixtures by thermal CVD in a hot-wall reactor

M. Schierling1, E. Zimmermann2 and D. Neuschütz2

1  Now with : Vacuumschmelze, 63450 Hanau, Germany
2  Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen, 52056 Aachen, Germany

The deposition rate of α-Al2O3 was measured at 0.1 and 1 bar and variable partial pressures of AlCl3, CO2, H2 and HCl by means of a thermobalance. HCl additions proved to have a retarding effect on the deposition. From the temperature and the total pressure dependence of the deposition rate it was concluded that the process was determined by chemical reactions rather than gas diffusion. The rate increased with AlCl3, CO2 and H2 partial pressures, decreased with rising HCl contents, and was independent of the CO pressure. The partial pressure dependences did not lead to simple reaction orders indicating the overlap of at least two parallel reactions. Two rate equations were deduced from the measurements to describe two parallel reaction paths, one equation being based on an assumed reaction mechanism involving the homogeneous watergas shift reaction and the subsequent heterogeneous formation of AlOCl(ad) as rate-determining intermediate. The second equation is purely empirical. Results of the numerical simulation based on these equations and heat and mass transport calculations are compared with the experimental observation.

© EDP Sciences 1999