J. Phys. IV France
Volume 08, Numéro PR9, December 1998
2nd European Meeting on Integrated Ferroelectrics
Page(s) Pr9-269 - Pr9-272
2nd European Meeting on Integrated Ferroelectrics

J. Phys. IV France 08 (1998) Pr9-269-Pr9-272

DOI: 10.1051/jp4:1998953

Process and characterization of (Pb,La)TiO3 thin films deposited by MOCVD for gigabit DRAM application

S.-S. Lee1, Y.-M. Kang1, J. Lee1, D.-H. Lee1 and H.-G. Kim2

1  Adv. Dev. & P. I. Dept.-1, Memory R&D Div., Hyundai Electronics Ind. Co., Ltd., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do 467-701, Korea
2  Department of Materials Science and Engineering, KAIST, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea

La-modified lead titanate. (Pb. La)TiO3, [PLT], thin films were deposited by low pressure metal organic chemical vapor deposition (MOCVD) on Pt/SiO2/Si substrates. The composition of the films was studied with various deposition conditions. Also, the electrical properties, such as the dielectric constant. the P-E hysteresis curve, and the leakage current density. were investigated with various annealing conditions. The experimental results show that the 180nm-thick PLT films with the La mole % of 12 are applicable as the planar capacitor laycr of 1 gigabit DRAM.

© EDP Sciences 1998