J. Phys. IV France 08 (1998) Pr9-269-Pr9-272
Process and characterization of (Pb,La)TiO3 thin films deposited by MOCVD for gigabit DRAM applicationS.-S. Lee1, Y.-M. Kang1, J. Lee1, D.-H. Lee1 and H.-G. Kim2
1 Adv. Dev. & P. I. Dept.-1, Memory R&D Div., Hyundai Electronics Ind. Co., Ltd., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyoungki-do 467-701, Korea
2 Department of Materials Science and Engineering, KAIST, 373-1 Kusong-dong, Yusong-gu, Taejon 305-701, Korea
La-modified lead titanate. (Pb. La)TiO3, [PLT], thin films were deposited by low pressure metal organic chemical vapor deposition (MOCVD) on Pt/SiO2/Si substrates. The composition of the films was studied with various deposition conditions. Also, the electrical properties, such as the dielectric constant. the P-E hysteresis curve, and the leakage current density. were investigated with various annealing conditions. The experimental results show that the 180nm-thick PLT films with the La mole % of 12 are applicable as the planar capacitor laycr of 1 gigabit DRAM.
© EDP Sciences 1998