J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-793 - C5-800
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-793-C5-800

DOI: 10.1051/jphyscol:1995594

SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)4-NH3-H2 System

A. Bendeddouche1, R. Berjoan2, E. Bêche3, S. Schamm4, V. Serin4, R. Carles5 and R. Hillel1

1  IMP-CNRS, University of Perpignan, 66860 Perpignan cedex, France
2  IMP-CNRS, BP. 5, Odeillo, 66120 Font-Romeu, France
3  LERMPS.IPSé, 90010 Belfort cedex, France
4  CEMES-LOE/CNRS, BP. 4347, 31055 Toulouse cedex, France
5  URA 74 du CNRS, University of Toulouse III, 31062 Toulouse cedex, France

Elaboration of amorphous SiCN materials was perfomed using a conventional thermaly activated CVD at 1000-1200°C from the TMS-NH3-H2 system. The influence on the deposition rate and the composition was investigated using an experimental design by varying : deposition temperature, pressure and NH3 flow rate. A set of 16 samples SiCxNy with x/y ranged from 0.04 to 1.69 was prepared. Accurate determination of the elemental compositon required EPMA-WDS and XPS and occasionally RBS analyses. The chemical bonding system was investigated by XPS and Raman spectroscopy. Comparisons between CVD prepared silicon carbide and nitride reference samples and the SiCxNy materials were achieved. It was concluded that for x/y [MATH] 0.15, Si-N was predominant, whereas for x/y [MATH] 0.86, the amorphous deposits mainly contain Si-N and Si-C, and additionally carbon bonds including C-Si and C-C, and probably a rather low C-N contribution. Raman study shown that C-C bonding could be related to a carbon excess acting as a binder in-between the tetrahedral networks of Si-C and Si-N. The first results of EXELFS concerning a carbon poor deposit shown that Si has a first coordination shell similar to that of Si3N4.

© EDP Sciences 1995