Numéro
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic Crystals
ECRYS - 93
Page(s) C2-165 - C2-170
DOI http://dx.doi.org/10.1051/jp4:1993233
International Workshop on Electronic Crystals
ECRYS - 93

J. Phys. IV France 03 (1993) C2-165-C2-170

DOI: 10.1051/jp4:1993233

Charge-density wave phase-slip in niobium triselenide : dislocations and the growth of an, electronic crystal

J.C. GILL

H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, Great-Britain


Abstract
The analogy is explored between phase-slip in charge-density wave conductors, which brings about the growth and decay of an electronic crystal, and the processes of growth and plastic flow which occur in conventional crystals. The experimental data on NbSe3 are re-examined, and new measurements of the voltage Vps needed to produce phase-slip at a given rate presented. It is suggested that Vps is determined mainly by the difficulty of inducing dislocation loops in the charge-density wave to climb to the crystal surface, rather than by their difficulty of nucleation.



© EDP Sciences 1993