Issue
J. Phys. IV France
Volume 12, Number 4, June 2002
Page(s) 51 - 61
DOI https://doi.org/10.1051/jp4:20020077


J. Phys. IV France
12 (2002) Pr4-51
DOI: 10.1051/jp4:20020077

Simulation and validation of SiO 2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactor

G.J. Schoof1, C.R. Kleijn1, H.E.A. Van Den Akker1, T.G.M. Oosterlaken2, H.J.C.M. Terhorst2 and F. Huussen2

1  Delft University of Technology, Kramers Laboratorium voor Fysische Technologie, Prins Bernhardlaan 6, 2628 Delft, The Netherlands
2  ASM International, Jan van Eycklaan 10, 3723 Bilthoven, The Netherlands


Abstract
Combining a slightly modified version of the chemical reaction mechanism for silicon-dioxide LPCVD from TEOS as proposed by Coltrin and coworkers, and the commercially available CFD program CFD-ACE+, a 21) model has been derived for gas flow, transport phenomena and deposition chemistry in the ASM A412 vertical 300mm multiwafer reactor. Silicon-dioxide deposition from TEOS is strongly influenced by gas-phase reactions, producing a reactive intermediate that is responsible for the majority of deposition. This phenomenon underlines the importance of the chemistry model in simulations. As a result of the gas phase intermediate, strong radial non-uniformities are observed. The simulation results have been validated against experimental growth rate data for various process conditions.



© EDP Sciences 2002

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