J. Phys. IV France
12
(2002)
Pr3-75
DOI: 10.1051/jp420020040
Forming PbTe on Si-substrates for IR sensors
V.I. Rudakov and I.M. Smirnov Institute of Microelectronics and Informatics, Russian Academy of Sciences, Street University 21, Yaroslavl 150007, Russia
Abstract
The lead chalcogenide (PbTe) layer has been grown by hot wall epitaxy directly on 100 mm Si substrate using a barium fluoride
(BaF
2) buffer layer. BaF
2 buffer layer was used to overcome the large lattice and thermal expansion mismatch. Structure characteristics of the PbTe
films grown on silicon substrates with the BaF
2 buffer layer were investigated by x - ray phase analysis. We have fabricated PbTe on Si sensor with cutoff wavelength 5,2
m.
© EDP Sciences 2002
