| Numéro |
J. Phys. IV France
Volume 07, Numéro C1, Mars 1997
7th INTERNATIONAL CONFERENCE ON FERRITES
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| Page(s) | C1-491 - C1-492 | |
| DOI | https://doi.org/10.1051/jp4:19971200 | |
J. Phys. IV France 07 (1997) C1-491-C1-492
DOI: 10.1051/jp4:19971200
Preparation of (Zn, Fe)Fe2O4 Thin Film by MOCVD
S. Ito1, T. Mochizuki1, M. Chiba1, K. Akashi1 and N. Yoneda21 Department of Industrial Chemistry, Faculty of Science and Technology, Science University of Tokyo, Noda Chiba 278, Japan
2 Faculty of Humanities, Seitoku University, Matsudo Chiba 271, Japan
Abstract
(Zn,Fe)Fe2O4 thin films have been prepared by MOCVD, applying a novel evaporation method for MO reagents ; Zn(acac)2 and Fe(acac)3. These reagents were mixed with a composition of Fe/Zn=0.5-2.0 and were then completely vaporized at 215°C. By the use of single evaporation vessel, the arrangement of MOCVD apparatus has been simple. The vapors with a constant ratio were evolved from the vessel to deposition zone to react with oxygen at 500°C for 30 min. The reproducibility was established on the relationship between mixing ratio and film composition. In addition, high crystallinity was obtained even at 500°C without annealing at higher temperature. The magnetic properties of the Zn0.73Fe0.27Fe2O4 thin film were measured as 38 emu/g and 110 Oe at 25°C.
© EDP Sciences 1997