J. Phys. IV France 07 (1997) C1-491-C1-492
Preparation of (Zn, Fe)Fe2O4 Thin Film by MOCVDS. Ito1, T. Mochizuki1, M. Chiba1, K. Akashi1 and N. Yoneda2
1 Department of Industrial Chemistry, Faculty of Science and Technology, Science University of Tokyo, Noda Chiba 278, Japan
2 Faculty of Humanities, Seitoku University, Matsudo Chiba 271, Japan
(Zn,Fe)Fe2O4 thin films have been prepared by MOCVD, applying a novel evaporation method for MO reagents ; Zn(acac)2 and Fe(acac)3. These reagents were mixed with a composition of Fe/Zn=0.5-2.0 and were then completely vaporized at 215°C. By the use of single evaporation vessel, the arrangement of MOCVD apparatus has been simple. The vapors with a constant ratio were evolved from the vessel to deposition zone to react with oxygen at 500°C for 30 min. The reproducibility was established on the relationship between mixing ratio and film composition. In addition, high crystallinity was obtained even at 500°C without annealing at higher temperature. The magnetic properties of the Zn0.73Fe0.27Fe2O4 thin film were measured as 38 emu/g and 110 Oe at 25°C.
© EDP Sciences 1997