| Numéro |
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
|
|
|---|---|---|
| Page(s) | C5-253 - C5-256 | |
| DOI | https://doi.org/10.1051/jp4:1993549 | |
Third International Conference on Optics of Excitons in Confined
Le Journal de Physique IV 03 (1993) C5-253-C5-256
DOI: 10.1051/jp4:1993549
1 Laboratoire de Physique de la Matière Condensée de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
2 Centre National d'Etude des Télécommunications, Laboratoire de Bagneux, 196 av. H. Ravera, 92220 Bagneux, France
© EDP Sciences 1993
Le Journal de Physique IV 03 (1993) C5-253-C5-256
DOI: 10.1051/jp4:1993549
Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device
J. COUTURIER1, J.C. HARMAND2 and P. VOISIN11 Laboratoire de Physique de la Matière Condensée de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
2 Centre National d'Etude des Télécommunications, Laboratoire de Bagneux, 196 av. H. Ravera, 92220 Bagneux, France
Abstract
We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs-AlInAs superlattice PIN structures. Bistability results, in analogy with the self electro-optical effect device, from a positive feedback mecanism due to the interplay between Wannier-Stark effect, built-in field and screening by photocarriers.
© EDP Sciences 1993