Numéro
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
Page(s) C5-253 - C5-256
DOI http://dx.doi.org/10.1051/jp4:1993549
Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-253-C5-256

DOI: 10.1051/jp4:1993549

Low power all-optical bistability in InGaAs-AlInAs superlattices : demonstration of a wireless self-electro-optical effect device

J. COUTURIER1, J.C. HARMAND2 and P. VOISIN1

1  Laboratoire de Physique de la Matière Condensée de l'Ecole Normale Supérieure, 24 rue Lhomond, 75005 Paris, France
2  Centre National d'Etude des Télécommunications, Laboratoire de Bagneux, 196 av. H. Ravera, 92220 Bagneux, France


Abstract
We report the observation of optical transmission bistability at low temperature in unprocessed InGaAs-AlInAs superlattice PIN structures. Bistability results, in analogy with the self electro-optical effect device, from a positive feedback mecanism due to the interplay between Wannier-Stark effect, built-in field and screening by photocarriers.



© EDP Sciences 1993