Numéro
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
Page(s) C6-181 - C6-186
DOI http://dx.doi.org/10.1051/jp4:1991627
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop

J. Phys. IV France 01 (1991) C6-181-C6-186

DOI: 10.1051/jp4:1991627

EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe

G.N. PANIN and E.B. YAKIMOV

Institute of Microelectronics Technology and High Purity Materials, USSR Academy of Sciences, Chernogolovka, Moscow District 142432, USSR


Abstract
The EBIC and remote contact EBIC (REBIC) techniques have been used to reveal grain boundaries and precipitates in CdTe crystals and to study their recombination contrast as a function of the electron beam parameters and temperature. The results obtained are discussed taking into account the defect charge state and the recombination properties of their environment.



© EDP Sciences 1991