J. Phys. IV France
Volume 133, June 2006
|Page(s)||1213 - 1215|
|Publié en ligne||16 juin 2006|
J.-C. Gauthier, et al.
J. Phys. IV France 133 (2006) 1213-1215
Ablation of transparent materials by high intensity and ultrashort laser pulsesI.N. Zavestovskaya
Lebedev Physical Institute, 119991 Moscow, Russia
The processes of nonlinear absorption is considered in transparent materials like nitride semiconductor, sapphire and others transparent dielectrics under ultrashort (fs-range) laser pulses irradiation. The ablation threshold is in multi-TW/cm2 range. The power consumption under the ablation process is described in terms of the tunneling absorption. It is derived the ablation threshold increases as about third power of the energy bandgap of the material, in close agreement with experimental data.
© EDP Sciences 2006