Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier; P. Lorenzini; M. Hugues; F. Semond; F. Natali; Z. Bougrioua; J. Massies; E. Frayssinet; B. Beaumont; P. Gibart; J.-P. Faurie

doi:doi:10.1051/jp4:2006132070

Numéro		J. Phys. IV France Volume 132, March 2006


Page(s)		365 - 368
DOI		https://doi.org/10.1051/jp4:2006132070
Publié en ligne		11 mars 2006

10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 365-368
DOI: 10.1051/jp4:2006132070

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier¹, P. Lorenzini¹, M. Hugues¹, F. Semond¹, F. Natali¹, Z. Bougrioua¹, J. Massies¹, E. Frayssinet², B. Beaumont², P. Gibart² and J.-P. Faurie²

¹ CRHEA-CNRS, Rue B.Grégory, Parc de Sophia Antipolis, 06560 Valbonne, France
² LUMILOG, 2720 Chemin St. Bernard, Les Moulins I, 06220 Vallauris, France

Abstract
In this work AlGaN/GaN high electron mobility transistors have been grown on Silicon (111), Silicon Carbide and GaN templates on Sapphire. Both the structural and the electrical properties of these layers have been studied in order to determine the impact of substrate choice on dislocation density, strain state, roughness and electron mobility.