J. Phys. IV France
Volume 132, March 2006
Page(s) 365 - 368
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 365-368

DOI: 10.1051/jp4:2006132070

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier1, P. Lorenzini1, M. Hugues1, F. Semond1, F. Natali1, Z. Bougrioua1, J. Massies1, E. Frayssinet2, B. Beaumont2, P. Gibart2 and J.-P. Faurie2

1  CRHEA-CNRS, Rue B.Grégory, Parc de Sophia Antipolis, 06560 Valbonne, France
2  LUMILOG, 2720 Chemin St. Bernard, Les Moulins I, 06220 Vallauris, France

In this work AlGaN/GaN high electron mobility transistors have been grown on Silicon (111), Silicon Carbide and GaN templates on Sapphire. Both the structural and the electrical properties of these layers have been studied in order to determine the impact of substrate choice on dislocation density, strain state, roughness and electron mobility.

© EDP Sciences 2006