Raman active modes of one-, two-, and three-phonon processes in the most important compounds and semiconductors with the rhombic, tetragonal, regular, trigonal, and hexagonal structures

Abstract
Based on the group theoretical methods we have derived selection rules for the first-, second-, and third-order Raman active modes in about one hundred important compounds. We have considered the most important twenty eight space groups of such compounds like high temperature superconductors, and semiconductors (Si, Ge, GaN, ZnO, GaAs, CdTe, InSb, CdS, and many others). Comprehensive tables of these compounds and their symmetries, together with the Raman selection rules are presented. Experimentally, we have performed the inelastic light scattering measurements. Several multi-phonon transitions in GaN and ZnO are monitored and group-theoretically assigned according to the derived selection rules.