| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 321 - 324 | |
| DOI | https://doi.org/10.1051/jp4:2006132061 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 321-324
DOI: 10.1051/jp4:2006132061
Institute of Materials Science, Academy of Science and Technology of Vietnam, 18 Hoang Quoc Viet Str., Cau Giay Dist., Hanoi, Vietnam
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 321-324
DOI: 10.1051/jp4:2006132061
Effect of ageing on the statical and time-resolved photoluminescence spectra of porous silicon
Bui Huy, Pham Van Hoi, Phi Hoa Binh, Tran Thi Kim Chi, Le Quang Huy and Nguyen Quang LiemInstitute of Materials Science, Academy of Science and Technology of Vietnam, 18 Hoang Quoc Viet Str., Cau Giay Dist., Hanoi, Vietnam
Abstract
This paper reports on the ageing effect of porous silicon studied by
statical and time-resolved photoluminescence spectroscopy. An
increase in the full-width at half-maximum of the statical
photoluminescence spectra of porous silicon from 200 meV to
500 meV after ageing of 24 hours in the air is observed and can be
attributed to added emission mechanism via self-trapped electrons.
The blue zone in the time-resolved photoluminescence spectra is
found only after ageing of 72 hours in the air and the luminescence
intensity of this zone increases by increasing the duration of the
ageing. These results suggest that the intense and stable blue-light
emission of porous silicon in the air may arise from defects in
silicon oxide.
© EDP Sciences 2006