J. Phys. IV France
Volume 132, March 2006
Page(s) 307 - 310
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 307-310

DOI: 10.1051/jp4:2006132058

Vibration modes and interface abruptness of CdSe quantum dots, embedded either in BeTe or ZnSe

J. Geurts1, U. Bass1, S. Mahapatra1, K. Brunner1, T. Muck2 and V. Wagner2

1  Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
2  International University Bremen, 28759 Bremen, Germany

We present a Raman spectroscopy study of the vibration modes of CdSe quantum dots, embedded either in BeTe or ZnSe. The spectra reflect different degrees of interface abruptness. Atomically sharp interfaces are obtained in the case of the BeTe matrix, especially when the interface bonds are chosen to be Cd-Te type. In contrast, noticeable intermixing occurs for the ZnSe matrix. The CdSe-BeTe vibration modes are described by ab initio calculations. The vibrations of CdSe-ZnSe are explained in terms of ternary (Cd,Zn)Se modes with increasing Cd content for increasing nominal CdSe coverage.

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