| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 307 - 310 | |
| DOI | https://doi.org/10.1051/jp4:2006132058 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 307-310
DOI: 10.1051/jp4:2006132058
1 Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
2 International University Bremen, 28759 Bremen, Germany
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 307-310
DOI: 10.1051/jp4:2006132058
Vibration modes and interface abruptness of CdSe quantum dots, embedded either in BeTe or ZnSe
J. Geurts1, U. Bass1, S. Mahapatra1, K. Brunner1, T. Muck2 and V. Wagner21 Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany
2 International University Bremen, 28759 Bremen, Germany
Abstract
We present a Raman spectroscopy study of the vibration modes of CdSe
quantum dots, embedded either in BeTe or ZnSe. The spectra reflect
different degrees of interface abruptness. Atomically sharp
interfaces are obtained in the case of the BeTe matrix, especially
when the interface bonds are chosen to be Cd-Te type. In contrast,
noticeable intermixing occurs for the ZnSe matrix. The CdSe-BeTe
vibration modes are described by ab initio calculations. The
vibrations of CdSe-ZnSe are explained in terms of ternary (Cd,Zn)Se
modes with increasing Cd content for increasing nominal CdSe
coverage.
© EDP Sciences 2006