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Numéro
J. Phys. IV France
Volume 132, March 2006
Page(s) 231 - 235
DOI https://doi.org/10.1051/jp4:2006132044
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 231-235
DOI: 10.1051/jp4:2006132044

Structural and magnetic properties of Ge $_{1-{\rm x}}$Mn$_{\rm x}$/Ge(001) 2 $\times$ 1 diluted magnetic semiconductors

P. De Padova1, C. Quaresima1, P. Perfetti1, N. Zema1, C. Grazioli1, M. Veronese1, B. Olivieri2, M.C. Richter3, O. Heckmann3, F. D'Orazio4, F. Lucari4 and K. Hricovini3

1  CNR-ISM, via Fosso del Cavaliere, 00133 Roma, Italy
2  CNR-ISAC, via Fosso del Cavaliere, 00133 Roma, Italy
3  LMPS, Université de Cergy-Pontoise, Neuville/Oise, 95031 Cergy-Pontoise, France
4  INFM-Dipartimento di Fisica, Univ. di L'Aquila, Via Vetoio-Coppito, I-67010 L'Aquila, Italy


Abstract
Structural and magnetic properties of Ge $_{\rm {1-x}}$Mn$_{\rm x}$ alloys, epitaxially grown on a Ge(001)$2\times 1$ surface have been investigated. We prepared Ge $_{\rm {1-x}}$Mn$_{\rm x}$ films by MBE as a function of substrate temperature and Mn concentration x. In-situ RHEED was used to monitor the streaks of the Ge $_{\rm {1-x}}$Mn$_{\rm x}$ epitaxial films. The optimal temperature, to obtain a very well-ordered epitaxial Ge $_{\rm {1-x}}$Mn$_{\rm x}$ alloy, for Mn concentrations of $\rm x=0.02$, and $\rm x=0.04$, was found to be 525 K. Ex-situ magneto-optical Kerr effect and XMCD at the L2/3 Mn2p absorption edges on Ge $_{\rm {1-x}}$ Mn$_{\rm x}$ films, show isotropic magnetic properties. The Curie temperature of about 270 K was found on most of the ordered samples.



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