| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 215 - 219 | |
| DOI | https://doi.org/10.1051/jp4:2006132041 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 215-219
DOI: 10.1051/jp4:2006132041
1 Department of Physics, University of Pretoria, Pretoria, South Africa
2 GES, Université Montpellier II, Montpellier, France
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 215-219
DOI: 10.1051/jp4:2006132041
Pulsed electron beam annealing: A tool for post-implantation damage control in SiC
D.J. Brink1, H.W. Kunert1, J.B. Malherbe1 and J. Camassel21 Department of Physics, University of Pretoria, Pretoria, South Africa
2 GES, Université Montpellier II, Montpellier, France
Abstract
The possibility of reversing ion implantation damage in SiC using
pulsed electron beam annealing is investigated. Using Raman
spectroscopy, photo luminescence and infrared reflectance it is
shown that good recovery can be obtained for an electron-energy
fluence of 1.1 J cm-2.
© EDP Sciences 2006