Numéro |
J. Phys. IV France
Volume 132, March 2006
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|
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Page(s) | 199 - 203 | |
DOI | https://doi.org/10.1051/jp4:2006132038 | |
Publié en ligne | 11 mars 2006 |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 199-203
DOI: 10.1051/jp4:2006132038
1 Div. Chemistry, Graduate School of Science, Hokkaido Univ., Sapporo, Hokkaido 060-0810, Japan
2 Dep. Compl. Sci. & Eng., Grad. Sch. Frontier Sci., Univ. Tokyo, Kashiwa, Chiba 277-8561, Japan
3 Dep. Physics, Graduate School of Science, Univ. Tokyo, Hongo, Tokyo 113-0033, Japan
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 199-203
DOI: 10.1051/jp4:2006132038
Metal induced gap states at tetratetracontane/Cu interface
M. Kiguchi1, G. Yoshikawa2, K. Saiki2, R. Arita3 and H. Aoki31 Div. Chemistry, Graduate School of Science, Hokkaido Univ., Sapporo, Hokkaido 060-0810, Japan
2 Dep. Compl. Sci. & Eng., Grad. Sch. Frontier Sci., Univ. Tokyo, Kashiwa, Chiba 277-8561, Japan
3 Dep. Physics, Graduate School of Science, Univ. Tokyo, Hongo, Tokyo 113-0033, Japan
Abstract
In order to search for states specific to organic-insulator/metal
interfaces, we have studied atomically well-defined
tetratetracontane(TTC)/Cu interface with the element-selective near
edge x-ray absorption fine structure (NEXAFS). An extra peak is
observed below the bulk edge onset for thin TTC films on Cu. We
regard the pre-peak as an evidence for the metal-induced gap states
(MIGS) formed by the proximity to a metal. An ab initio
electronic structure calculation supports the existence of the MIGS.
© EDP Sciences 2006