J. Phys. IV France
Volume 132, March 2006
Page(s) 199 - 203
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 199-203

DOI: 10.1051/jp4:2006132038

Metal induced gap states at tetratetracontane/Cu interface

M. Kiguchi1, G. Yoshikawa2, K. Saiki2, R. Arita3 and H. Aoki3

1  Div. Chemistry, Graduate School of Science, Hokkaido Univ., Sapporo, Hokkaido 060-0810, Japan
2  Dep. Compl. Sci. & Eng., Grad. Sch. Frontier Sci., Univ. Tokyo, Kashiwa, Chiba 277-8561, Japan
3  Dep. Physics, Graduate School of Science, Univ. Tokyo, Hongo, Tokyo 113-0033, Japan

In order to search for states specific to organic-insulator/metal interfaces, we have studied atomically well-defined tetratetracontane(TTC)/Cu interface with the element-selective near edge x-ray absorption fine structure (NEXAFS). An extra peak is observed below the bulk edge onset for thin TTC films on Cu. We regard the pre-peak as an evidence for the metal-induced gap states (MIGS) formed by the proximity to a metal. An ab initio electronic structure calculation supports the existence of the MIGS.

© EDP Sciences 2006