10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 159-162
DOI: 10.1051/jp4:2006132031

Orientation and interface effects on the structural and magnetic properties of MnAs-on-GaAs hybrid structures

L. Däweritz¹, D. Kolovos-Vellianitis¹, A. Trampert¹, C. Herrmann¹, K.H. Ploog¹, E. Bauer^{2, 3}, A. Locatelli³, S. Cherifi⁴ and S. Heun<sup>5

1</sup>  Paul-Drude-Institut für Festkörperelektronik, 10117 Berlin, Germany
²  Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287, USA
³  Sincrotrone Trieste, 34012 Basovizza, Trieste, Italy
⁴  Laboratoire Louis Néel, CNRS, 38042 Grenoble Cedex 9, France
⁵  TASC-INFM Laboratory, Basovizza, 34012 Trieste, Italy

Abstract
MnAs grows either with the prism-plane on GaAs(001), (113)A and (110) or the (0001) c-plane on GaAs(111)B substrates. The strain state of the films determines the phase coexistence of ferromagnetic - and paramagnetic -MnAs and their distribution in self-organized structures. The mismatch accommodation mechanisms along the a-axis of -MnAs are in principle the same for all substrate orientations, while they are very different along the c-axis. Depending on the orientation the Curie temperature can exceed the value for bulk MnAs.

© EDP Sciences 2006