Numéro
J. Phys. IV France
Volume 132, March 2006
Page(s) 153 - 157
DOI https://doi.org/10.1051/jp4:2006132030
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 153-157

DOI: 10.1051/jp4:2006132030

Magnetic and structural properties of Mn/InSb(001)

M. Zerrouki1, 2, P. De Padova2, C. Quaresima2, P. Perfetti2, M.C. Richter1, O. Heckmann1 and K. Hricovini1

1  LPMS, Université de Cergy-Pontoise, Neuville/Oise, 95031 Cergy-Pontoise, France
2  CNR-ISM, Via del Fosso del Cavaliere, 00133 Roma, Italy


Abstract
We have investigated the temperature effect on Mn dilution into InSb substrates by means of high-resolution core level spectroscopy, surface EXAFS, and by X-ray Magnetic Circular Dichroism (XMCD) using synchrotron radiation. Samples were prepared by manganese deposition of 1, 2, 4 and 8 ML at room temperature (RT) and at 500 K on InSb(001) ( $4 \times 2$)c( $8 \times 2$) surfaces. By fitting In 4d and Sb 4d core level spectra with Voigt-functions, we identify metallic In and Sb atoms segregated on the surface. EXAFS results show MnSb-like compound formation with hexagonal structure in which Mn atoms replace some antimony atoms in the first nearest neighbours shell.



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